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PD - 94180
l
Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description
l Advanced HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2 Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRFZ34VL) is available for lowprofile application.
HEXFET(R) Power MOSFET
D
IRFZ34VS IRFZ34VL
VDSS = 60V
RDS(on) = 28m
G S
ID = 30A
D2Pak IRFZ34VS
TO-262 IRFZ34VL
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
30 21 120 70 0.46 20 30 7.0 4.5 -55 to + 175 300 (1.6mm from case )
Units
A W W/C V A mJ V/ns C
Thermal Resistance
Parameter
RJC RJA Junction-to-Case Junction-to-Ambient (PCB Mounted)**
Typ.
--- ---
Max.
2.15 40
Units
C/W
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1
02/14/02
IRFZ34VS/IRFZ34VL
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss EAS
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Single Pulse Avalanche Energy
Min. 60 --- --- 2.0 15 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. --- 0.062 --- --- --- --- --- --- --- --- --- --- 10 65 31 40 4.5 7.5 1120 250 59 260
Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 28 m VGS = 10V, ID = 18A 4.0 V VDS = VGS, ID = 250A --- S VDS = 25V, ID = 18A 25 VDS = 60V, VGS = 0V A 250 VDS = 48V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 49 ID = 30A 12 nC VDS = 48V 18 VGS = 10V, See Fig. 6 and 13 --- VDD = 30V --- ID = 30A ns --- RG = 12 --- VGS = 10V, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 81 mJ
D
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr ton Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol 30 --- --- showing the A G integral reverse --- --- 120 S p-n junction diode. --- --- 1.6 V TJ = 25C, IS = 30A, VGS = 0V --- 70 110 ns TJ = 25C, IF = 30A --- 99 150 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 ) Starting TJ = 25C, L = 180H RG = 25, IAS = 30A. (See Figure 12) ISD 30A, di/dt 250A/s, VDD V(BR)DSS, TJ 175C
Pulse width 400s; duty cycle 2%. Uses IRFZ34V data and test conditions.
** When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994.
2
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IRFZ34VS/IRFZ34VL
1000
I D , Drain-to-Source Current (A)
100
I D , Drain-to-Source Current (A)
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
1000
100
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
10
10
4.5V
4.5V
20s PULSE WIDTH T = 25 C
J 1 10 100
1 0.1
1 0.1
20s PULSE WIDTH T = 175 C
J 1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
3.5
ID = 30A
RDS(on) , Drain-to-Source On Resistance (Normalized)
I D , Drain-to-Source Current (A)
3.0 2.5
TJ = 25 C TJ = 175 C
100
2.0 1.5
10
1.0
1 4 5 6 7
V DS = 50V 20s PULSE WIDTH 9 10 8 11
0.5 0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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3
IRFZ34VS/IRFZ34VL
2000
VGS , Gate-to-Source Voltage (V)
1600
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
20
ID = 30A
16
C, Capacitance (pF)
VDS = 48V VDS = 30V VDS = 12V
1200
Ciss
12
800
8
400
C oss C rss
4
0 1 10 100
0 0 10 20
FOR TEST CIRCUIT SEE FIGURE 13
30 40 50
VDS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY R
DS(on)
TJ = 175 C
I D , Drain Current (A)
100
100
10us
10
100us
10
TJ = 25 C
1
0.1 0.0
V GS = 0 V
0.4 0.8 1.2 1.6 2.0
1
TC = 25 C TJ = 175 C Single Pulse
1ms 10ms
100
1
10
1000
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRFZ34VS/IRFZ34VL
30
VDS
25
RD
VGS RG
D.U.T.
+
I D , Drain Current (A)
20
-VDD
10V
15
Pulse Width 1 s Duty Factor 0.1 %
10
Fig 10a. Switching Time Test Circuit
5
VDS 90%
0 25 50 75 100 125 150 175
TC , Case Temperature
( C)
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
1
D = 0.50 0.20 0.10 0.05
0.1
0.02 0.01
SINGLE PULSE (THERMAL RESPONSE)
0.01 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.01 0.0001 0.001
P DM t1 t2 0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFZ34VS/IRFZ34VL
160
EAS , Single Pulse Avalanche Energy (mJ)
15 V
VDS
L
D R IV E R
120
TOP BOTTOM ID 12A 21A 30A
RG
20V
D .U .T
IA S tp 0.0 1
+ - VD D
A
80
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D SS tp
40
0 25 50 75 100 125 150 175
Starting TJ , Junction Temperature ( C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
10 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
IG
ID
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
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IRFZ34VS/IRFZ34VL
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T* Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
+
-
+
RG VGS * dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test
+ VDD
*
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive P.W. Period D=
P.W. Period
[VGS=10V ] ***
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
[VDD]
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
[ ISD ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET(R) power MOSFETs
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7
IRFZ34VS/IRFZ34VL
D2Pak Package Outline
1 0.54 (.415 ) 1 0.29 (.405 ) 1.4 0 (.055 ) M AX. -A2
4 .6 9 (.18 5) 4 .2 0 (.16 5)
-B1.3 2 (.05 2) 1.2 2 (.04 8)
10 .1 6 (.4 00 ) R E F.
6.47 (.2 55 ) 6.18 (.2 43 ) 1 5.49 (.6 10) 1 4.73 (.5 80) 5.28 (.2 08 ) 4.78 (.1 88 ) 2.7 9 (.110 ) 2.2 9 (.090 ) 2.61 (.1 03 ) 2.32 (.0 91 ) 1.3 9 (.0 55 ) 1.1 4 (.0 45 ) 8.8 9 (.3 50 ) R E F.
1.7 8 (.07 0) 1.2 7 (.05 0)
1
3
3X
1.40 (.0 55) 1.14 (.0 45) 5 .08 (.20 0)
0.9 3 (.0 37 ) 3X 0.6 9 (.0 27 ) 0.25 (.0 10 ) M BAM
0.55 (.0 22) 0.46 (.0 18)
M IN IM U M R EC O M M E ND E D F O O TP R IN T 1 1.43 (.4 50 )
NO TE S: 1 D IM EN S IO N S A FTER SO LD E R D IP . 2 D IM EN S IO N IN G & TO LE R AN C IN G P ER AN S I Y1 4.5M , 19 82 . 3 C O N TRO L LIN G D IM EN S IO N : IN C H. 4 H E ATSINK & L EA D D IM E N SIO N S DO N O T IN C LU D E B U R RS .
LE AD AS SIG N M E N TS 1 - G ATE 2 - D RA IN 3 - SO U R C E
8 .89 (.35 0) 17 .78 (.70 0)
3.81 (.1 5 0) 2.0 8 (.08 2) 2X 2.5 4 (.100 ) 2X
Part Marking Information
D2Pak
IN TE R N A TIO N A L R E C T IF IE R LO G O A S S E M B LY LO T C O D E
PART NUM BER F530S 9 24 6 9B 1M
A
DATE CODE (Y YW W ) YY = Y E A R W W = W EEK
8
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IRFZ34VS/IRFZ34VL
Package Outline
TO-262 Outline
Part Marking Information
TO-262
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9
IRFZ34VS/IRFZ34VL
Tape & Reel Information
D2Pak
TR R
1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 4 .1 0 (.1 6 1 ) 3 .9 0 (.1 5 3 )
1 .60 (.06 3) 1 .50 (.05 9) 0 .3 68 (.0 1 4 5 ) 0 .3 42 (.0 1 3 5 )
F E E D D IRE CTIO N 1 .8 5 (.0 7 3 )
1 .6 5 (.0 6 5 )
1 1 .6 0 (.4 5 7 ) 1 1 .4 0 (.4 4 9 )
1 5 .4 2 (.6 0 9 ) 1 5 .2 2 (.6 0 1 )
2 4 .3 0 (.9 5 7 ) 2 3 .9 0 (.9 4 1 )
TR L
10 .9 0 (.42 9) 10 .7 0 (.42 1) 1 .75 (.06 9 ) 1 .25 (.04 9 ) 16 .10 (.63 4 ) 15 .90 (.62 6 ) 4 .7 2 (.1 3 6) 4 .5 2 (.1 7 8)
F E E D D IRE C TIO N
13.50 (.532 ) 12.80 (.504 )
2 7.4 0 (1.079) 2 3.9 0 (.9 41)
4
33 0.00 (1 4.1 73) MA X.
60.00 (2.3 62) MIN .
NO TES : 1. C O M F O R M S TO E IA -4 18. 2. C O N TR O LLIN G D IM E N S IO N : M ILL IM ET ER . 3. D IM E N S IO N ME A S U R E D @ H U B . 4. IN C LU D E S F LA N G E D IS TO R T IO N @ O U T E R E D G E .
26 .40 (1.03 9) 24 .40 (.961 ) 3
3 0.40 (1.1 97) MAX. 4
Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.02/02
10
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